secondary impact electron
常见例句
- Gate current for pMOSFETs is composed of direct tunneling current, channel hot hole, electron injection current, and highly energetic hot holes by secondary impact ionization.
栅电流由四部分组成 ：直接隧穿电流、沟道热空穴、一次碰撞电离产生的电子注入、二次碰撞电离产生的空穴注入 。 返回 secondary impact electron